 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BDW42* - NPN, BDW46, BDW47* - PNP Preferred Device Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features http://onsemi.com * Pb-Free Package is Available** * High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc. * Collector Emitter Sustaining Voltage @ 30 mAdc: * * * VCEO(sus) = 80 Vdc (min) - BDW46 100 Vdc (min.) - BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc Monolithic Construction with Built-In Base Emitter Shunt resistors TO-220AB Compact Package 15 A DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 V, 85 W MARKING DIAGRAM 4 TO-220AB CASE 221A STYLE 1 1 BDWxx YYWW MAXIMUM RATINGS Rating Collector-Emitter Voltage BDW46 BDW42, BDW47 Collector-Base Voltage BDW46 BDW42, BDW47 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEB IC IB PD 85 0.68 TJ, Tstg -55 to +150 W W/C C BDW42 BDW46 BDW47 BDW47G TO-220AB TO-220AB TO-220AB TO-220AB (Pb-Free) 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail VCB 80 100 5.0 15 0.5 Vdc Adc Adc Symbol VCEO 80 100 Vdc Value Unit Vdc 2 3 xx = 42, 46 or 47 YY = Year WW = Work Week ORDERING INFORMATION Device Package Shipping Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Symbol RqJC Max 1.47 Unit C/W For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Preferred devices are ON Semiconductor recommended choices for future use and best overall value **For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2004 June, 2004 - Rev. 11 Publication Order Number: BDW42/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS SECOND BREAKDOWN (Note 2) ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Magnitude of common emitter small signal short circuit current transfer ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Second Breakdown Collector Current with Base Forward Biased BDW42 Base-Emitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 50 mAdc) DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) BDW46/BDW47 Characteristic BDW42* - NPN, BDW46, BDW47* - PNP 10 PD, POWER DISSIPATION (WATTS) 20 30 40 50 60 70 80 90 0 Figure 1. Power Temperature Derating Curve 25 http://onsemi.com TC, CASE TEMPERATURE (C) 50 75 BDW42 BDW46/BDW47 BDW46 BDW42/BDW47 VCE = 28.4 Vdc VCE = 40 Vdc VCE = 22.5 Vdc VCE = 36 Vdc BDW46 BDW42/BDW47 BDW46 BDW42/BDW47 100 125 VCEO(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO Cob hFE IS/b hfe fT 150 1000 250 Min 80 100 300 4.0 3.0 1.2 3.8 1.2 - - - - - - - - - - Max 200 300 3.0 2.0 3.0 2.0 1.0 1.0 2.0 2.0 - - - - - - - - - - mAdc mAdc mAdc MHz Unit Adc Vdc Vdc Vdc pF 2 BDW42* - NPN, BDW46, BDW47* - PNP 5.0 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA TUT RB V2 APPROX VCC - 30 V RC 3.0 2.0 SCOPE t, TIME ( s) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 ts tf + 8.0 V 0 V1 APPROX 51 D1 + 4.0 V [ 8.0 k [ 150 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 0.3 - 12 V tr, tf v 10 ns DUTY CYCLE = 1.0% 25 s for td and tr, D1 id disconnected and V2 = 0 For NPN test circuit reverse all polarities td @ VBE(off) = 0 V 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times Test Circuit Figure 3. Switching Times r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.02 t1 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 P(pk) RJC(t) = r(t) RJC RJC = 1.92C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response http://onsemi.com 3 BDW42* - NPN, BDW46, BDW47* - PNP ACTIVE-REGION SAFE OPERATING AREA 50 IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 1.0 BDW42 2.0 3.0 5.0 7.0 10 50 70 100 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25C (SINGLE PULSE) dc TJ = 25C 1.0 ms 0.1 ms IC, COLLECTOR CURRENT (AMP) 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 1.0 BDW46 BDW47 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25C (SINGLE PULSE) TJ = 25C 1.0 ms 0.1 ms 0.5 ms 0.5 ms dc Figure 5. BDW42 Figure 6. BDW46 and BDW47 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 and 6 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. *Linear extrapolation 10,000 hFE, SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 300 TJ = + 25C 200 C, CAPACITANCE (pF) TJ = 25C VCE = 3.0 V IC = 3.0 A BDW46, 47 (PNP) BDW42 (NPN) 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 100 70 50 Cib Cob BDW46, 47 (PNP) BDW42 (NPN) 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 30 0.1 Figure 7. Small-Signal Current Gain Figure 8. Capacitance http://onsemi.com 4 BDW42* - NPN, BDW46, BDW47* - PNP BDW42 (NPN) 20,000 VCE = 3.0 V 10,000 hFE, DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 -55 C TJ = 150C 10,000 hFE, DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 20,000 BDW46, 47 (PNP) VCE = 3.0 V TJ = 150C 25C 25C -55 C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 1.8 1.8 1.4 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 Figure 10. Collector Saturation Region 3.0 TJ = 25C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.5 3.0 TJ = 25C 2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 1.5 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 1.0 0.5 IC, COLLECTOR CURRENT (AMP) Figure 11. "On" Voltages http://onsemi.com 5 BDW42* - NPN, BDW46, BDW47* - PNP BDW42 (NPN) +5.0 +4.0 +3.0 +2.0 +1.0 0 -1.0 -2.0 -3.0 -4.0 -5.0 0.1 0.2 0.3 0.5 0.7 1.0 VB for VBE *VC for VCE(sat) 25C to 150C -55 C to 25C 2.0 3.0 5.0 7.0 10 *IC/IB v 250 25C to 150C -55 C to 25C +5.0 +4.0 +3.0 +2.0 +1.0 0 -1.0 -2.0 -3.0 -4.0 -5.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 *VC for VCE(sat) -55 C to + 25C VB for VBE + 25C to 150C -55 C to +25C *IC/IB v 250 + 25C to 150C BDW46, 47 (PNP) V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENT (mV/ C) IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 12. Temperature Coefficients 105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 101 100 10- 1 +0.6 +0.4 TJ = 150C 100C 25C +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 REVERSE VCE = 30 V FORWARD 105 104 103 102 TJ = 150C 101 100 100C REVERSE VCE = 30 V FORWARD 25C 10- 1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Collector Cut-Off Region NPN BDW42 COLLECTOR PNP BDW46 BDW47 COLLECTOR BASE BASE [ 8.0 k [ 60 [ 8.0 k [ 60 EMITTER EMITTER Figure 14. Darlington Schematic http://onsemi.com 6 BDW42* - NPN, BDW46, BDW47* - PNP PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AB B 4 F C T A S -T- SEATING PLANE Q 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 H K Z L V G D N U R J STYLE 1: PIN 1. 2. 3. 4. http://onsemi.com 7 BDW42* - NPN, BDW46, BDW47* - PNP ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 BDW42/D |
Price & Availability of BDW47G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |